Nanoscale Magnetoelectric Coupling in Multiferroics: Mechanisms and Applications in Next-Generation Memory Devices

Abstract

Multiferroics, materials exhibiting simultaneous ferroelectric and magnetic order, have garnered significant attention for their magnetoelectric (ME) coupling, enabling control of magnetization with electric fields and vice versa. This article explores the mechanisms underlying nanoscale ME coupling in multiferroics, aiming to elucidate their microscopic origins, review recent advancements, and evaluate their potential in next-generation memory devices. We investigate how ME coupling arises from spin-lattice interactions and strain-mediated effects, focusing on materials like BiFeO₃ and TbMnO₃. A comprehensive literature review synthesizes theoretical and experimental insights into ME phenomena. Our methodology integrates density functional theory (DFT) simulations and experimental techniques, such as piezoresponse force microscopy (PFM), to model ME coupling and validate its strength. Applications in low-power memory devices, such as magnetoelectric random-access memory (MeRAM), are discussed, highlighting their energy efficiency and scalability. Results demonstrate strong ME coupling coefficients and robust switching in nanoscale devices, underscoring multiferroics’ potential to revolutionize non-volatile memory. This work emphasizes the transformative impact of ME coupling on memory technology and future research directions.