A Thin Film Distributed Phase Shifter Based on Pyrochlore, Bismuth, and Zinc Niobate

Authors

  • Archana Science Department, Government polytechnic, Kalaburagi, Karnataka India.
  • Sadiya Afreen Department of Science, Government polytechnic, Kalagi,Kalaburagi Karnataka, India.
  • Shakuntala M Sajjanar Lecturer, Science Department, Government polytechnic Bagalkot -587103, Karnataka, India.

Keywords:

Phase shifters, coplanar waveguides, bismuth zinc niobate, thin films, tunable dielectric, non-ferroelectric

Abstract

There is news of a monolithic Ku-band phase shifter that uses capacitors made of voltage-tunable Bi1.5Zn1.0Nb1.5O7 (BZN) thin films. On single-crystal sapphire substrates, BZN films were deposited using RF magnetron sputtering. A phase-shifter structure with nine sections was constructed using dispersed CPW loading lines. At 15 GHz, a figure of merit of about 50°/dB was obtained, resulting in a differential phase shift of 175° and a maximum insertion loss of 3.5 dB. So far as we are aware, this is the first instance of a BZN thin film-based monolithic adjustable microwave circuit.

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Published

23-06-2016

How to Cite

Archana, Sadiya Afreen, & Shakuntala M Sajjanar. (2016). A Thin Film Distributed Phase Shifter Based on Pyrochlore, Bismuth, and Zinc Niobate. Journal of Scientific Research and Technology, 3(1). Retrieved from https://jsrtjournal.com/index.php/JSRT/article/view/173

Issue

Special Edition

Section

Articles

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This work is licensed under a Creative Commons Attribution 4.0 International License.

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