Two-Dimensional Materials Beyond Graphene: Properties and Device Applications

Abstract

Two-dimensional (2D) materials beyond graphene have gained significant attention due to their exceptional electronic, optical, and mechanical properties, making them promising candidates for next-generation nanoelectronics and optoelectronic applications. Transition metal dichalcogenides (TMDs), black phosphorus (BP), MXenes, and silicene exhibit unique bandgap tunability, high carrier mobility, and strong light-matter interactions, which overcome graphene's limitations, such as its lack of an intrinsic bandgap. This paper explores the synthesis, properties, and device applications of these advanced 2D materials. Various fabrication techniques, including chemical vapor deposition (CVD), mechanical exfoliation, and solution processing, are discussed in detail.
An experimental investigation is conducted to analyze the electronic transport and optical properties of MoS₂, WS₂, BP, and MXenes. Electrical measurements reveal high on/off current ratios in TMD-based transistors, while photoluminescence studies confirm the bandgap tunability of these materials. Additionally, Raman spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM) provide insight into structural integrity and surface morphology. The study further explores applications in field-effect transistors (FETs), photodetectors, quantum computing, and energy storage. Despite promising advancements, challenges such as scalability, stability, and integration with existing semiconductor technologies remain.
This review highlights recent breakthroughs in experimental techniques and computational modeling, which pave the way for novel 2D material-based devices. The findings underscore the potential of these materials in revolutionizing nanoelectronics and photonics, with prospects for future research in room-temperature superconductivity, spintronics, and AI-driven material discovery.